HCNW3120-500E

Opere seryezman nan yon endistriyèl tanperati ranje –40 degre 100 degre degre , HCN aW{{2}E kanpe kòm a serye ak efikas chwa divès aplikasyon elektwonik endistri yo.

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Dekri teren

Karakteristik teknik

HCNW{0}}E optocoupler gate chofè emerges kòm a koupe-edge solu , karakterize pa yon gaya maksimòm pik pwodiksyon aktyèl nan 2.5 A ak minimòm pwodiksyon kouran nan 2.0 A. yon enpresyonan 25 kV/μs minimum Common Mode Rejection (CMR) at VCM =1500 V, aparèy asire brie immunity. Its maximum ba-nivo pwodiksyon voltage ; VOL) 0.5 V Elimine negatif kondwi, streamlining system design. Operating ak yon maximum suply &a 5 5 mA, li balans pèfòmans ak efikasite. in nan Under Voltage Voltage Lock-Out (UVLO) pwoteksyon, lajè opere voltage ranje 15 30 Volts, a rapid 500 ns maksimòm oblije chanje plis enhance versatility versatility.

product-1267-944

Ki gen rapò Pwodwi yo% 3a

Mfr Pati	HCNW{{0}e}E	HCNW{{0}e}E	HCNW{{0}e}E	HCNW{{0}e}E	HCNW{{0}e}E	HCNW{{0}e}E
Deskripsyon	OPTOISO IGBT MOSFET CHOFÈ	OPTOISO IGBT MOSFET CHOFÈ	OPTOISO IGBT MOSFET CHOFÈ	OPTOISO IGBT MOSFET CHOFÈ	OPTOISO IGBT MOSFET CHOFÈ	OPTOISO IGBT MOSFET CHOFÈ
Machandiz	50000	50000	50000	50000	50000	50000
Pwodwi Estati	Aktif	Aktif	Aktif	Aktif		Aktif
Teknoloji	Optik Coupling	Optik Coupling	Optik Coupling	Optik Coupling		Optik Coupling
Nimewo nan Channels	1	1	1	1	1	1
Vòltaj -Izolasyon	5000Vrms	5000Vrms	5000Vrms	5000Vrms	5000Vrms	5000Vrms
Komen Mode Transient Immunity (Min)	25kV/us	25kV/us	25kV/us	25kV/us	25kV/us	25kV/us
Pwopagasyon Delay tpLH / tpHL (Max)	500ns% 2c 500ns	500ns% 2c 500ns	500ns% 2c 500ns	500ns% 2c 500ns	500ns% 2c 500ns	500ns% 2c 500ns
Pulse Lajè Defòmasyon (Max)	300ns	300ns	300ns	300ns	300ns	300ns
Kouran - Sòti -Wo, Ba	2A, 2A	2A, 2A	2A, 2A	2A, 2A	2A, 2A	2A, 2A
Kouran - Peak Output	2A	2A	2A	2A	2A	2A
Vòltaj Forward (VF) (Typ)	1.6V	1.6V	1.6V	1.6V	1.6V	1.6V
Aktyèl DC DC Forward (Si) (Max)	25 mA	25 mA	25 mA	25 mA	25 mA	25 mA
Vòltaj - Sòti Ekipman pou	15 V ~ 30 V	15 V ~ 30 V	15 V ~ 30 V	15 V ~ 30 V	15 V ~ 30 V	15 V ~ 30 V
Opere Tanperati	-40-C ~ 100-C	-40-C ~ 100-C	-40-C ~ 100-C	-40-C ~ 100-C	-40-C ~ 100-C	-40-C ~ 100-C
	DIP8 (9.0mm)	DIP8 (9.0mm)	SMD8(9.0mm)	SMD8(9.0mm)	SMD8(9.0mm)	SMD8(9.0mm)
Pake	Tib	Tib	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)

�% a2IGBT/MOSFET baryè kondwi

�% 80�AC/Brushless DC motè kondui

�% 80�Industrial intervers

•Switch mòd power supplies

Deskripsyon:

HCPL-3120 gen a GaAsP dirije HCPL-J312 ak HCNW3120 gen AlgaAs LED. ki ap dirije optikman optik entegre entegre entegre etap op corbecouplers yo idealman adapte kondwi IGBTs ak MOSFETs itilize motè control inverter opere opere vòltaj pwodiksyon etap kondwi kondwi kondwi obligatwa kontwole aparèy. vòltaj ak aktyèl apwovizyone pa sa yo optocouplers fè idealman adapte dirèkteman kondwi IGBTs ak evalyasyon 1200 V/100 A. Pou IGBTs pi wo evalyasyon% HCPL-3120 se itilize kondwi a diskrè etap kondui IGBT HCNW3120 izolasyon voltage VIORM=1414Vpeak IEC/EN/DIN 7b9{9}}%. HCPL-J312 gen yon izolasyon vòltaj VIORM {{12}Vpeak ak VIORM =630Vpeak disponib tou ak HCPL-3120 7d 060).

ATANSYON

Li se konseye ke nòmal estatik prekosyon pran pran handling ak assembly component anpeche anpeche domaj ak/or degradasyon ki ka dwe induit pa ESD.

Baj popilè: hcnw{{0}e}e, Lachin hcnw{{1}e manifaktirè, foto

HCPL-0302-500E

Pwochen

ACPL-W349-500E

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